Product Information

QS8J2TR

QS8J2TR electronic component of ROHM

Datasheet
Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.3747 ( AUD 1.51 Inc GST) ea
Line Total: AUD 1.3747 ( AUD 1.51 Inc GST)

2024 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
95 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 1
Multiples : 1

Stock Image

QS8J2TR
ROHM

1 : AUD 0.6573
10 : AUD 0.6445
30 : AUD 0.6347
100 : AUD 0.6252

2024 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

Stock Image

QS8J2TR
ROHM

1 : AUD 1.3747
10 : AUD 1.1394
100 : AUD 0.9129
500 : AUD 0.7962
1000 : AUD 0.667
3000 : AUD 0.6352
6000 : AUD 0.6352
9000 : AUD 0.6104

363 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 32
Multiples : 1

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QS8J2TR
ROHM

32 : AUD 2.0026
50 : AUD 1.6726
100 : AUD 1.08
200 : AUD 1.0776

2910 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 152
Multiples : 1

Stock Image

QS8J2TR
ROHM

152 : AUD 1.0778
250 : AUD 1.0346
500 : AUD 0.9972
1000 : AUD 0.9646
2500 : AUD 0.9362

213 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 152
Multiples : 1

Stock Image

QS8J2TR
ROHM

152 : AUD 1.0778

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

QS8J2 Datasheet -12V Pch + Pch Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 36m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 10 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002 QS8J2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 26 36 GS D V = -2.5V, I = -2A - 36 50 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 46 69 GS D V = -1.5V, I = -0.8A - 66 132 GS D R Gate input resistance f = 1MHz, open drain - 15 - G Forward Transfer *4 Y V = -6V, I = -4A 5.5 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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