NTA7002NT1G

NTA7002N, NVTA7002N MOSFET Single, N-Channel, Small Signal, Gate ESD Protection, SC-75 30 V, 154 mA NTA7002N, NVTA7002N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 30 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 A DSS GS DS Zero Gate Voltage Drain Current I V = 0 V, V = 20 V, 1.0 A DSS GS DS T = 85 C GatetoSource Leakage Current I V = 0 V, V = 10 V 25 A GSS DS GS GatetoSource Leakage Current I V = 0 V, V = 5 V 1.0 A GSS DS GS GatetoSource Leakage Current I V = 0 V, V = 5 V 1.0 A GSS DS GS T = 85 C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 100 A 0.5 1.0 1.5 V GS(TH) DS GS D DraintoSource On Resistance R V = 4.5 V, I = 154 mA 1.4 7.0 DS(on) GS D V = 2.5 V, I = 154 mA 2.3 7.5 GS D Forward Transconductance g V = 3 V, I = 154 mA 80 mS FS DS D CAPACITANCES Input Capacitance C 11.5 20 ISS V = 5.0 V, f = 1 MHz, DS Output Capacitance C 10 15 pF OSS V = 0 V GS Reverse Transfer Capacitance C 3.5 6.0 RSS SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 13 ns d(ON) Rise Time t 15 r V = 4.5 V, V = 5.0 V, GS DS I = 75 mA, R = 10 D G TurnOff Delay Time t 98 d(OFF) ns Fall Time t 60 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 154 mA 0.77 0.9 V SD GS S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.