PMN40UPE 20 V, single P-channel Trench MOSFET 13 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 4 kV ESD protection 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -6 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3 A T = 25 C - 37 43 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMN40UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 6 5 4 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain S 6 D drain 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN40UPE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN40UPE WD 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -8 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -6 A D GS amb V = -4.5 V T = 25 C 1 - -4.7 A GS amb V = -4.5 V T = 100 C 1 - -3.5 A GS amb I peak drain current T = 25 C single pulse t 10 s - -16 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb 1 - 1220 mW T = 25 C - 8330 mW sp PMN40UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 13 August 2012 2 / 14