The FDV303N with SOT-23 MOSFETs ROHS manufactured by MSKSEMI is an integrated N-channel enhancement type MOSFET designed for general purpose switching and low-power applications. It operates over a wide temperature range from –40°C to +85°C and has a low on-resistance of 3.5 Ohms. It is equipped with an integrated, integrated N-channel gate protection diode which helps to protect the MOSFET from transient overvoltage spikes. The MOSFET also has an RoHS Compliant lead-free finish. This MOSFET offers very low RDS (on) and is available in SOT-23 (3 leads) packages. It is ideal for applications like load switching, voltage clamping, and IRF applications.