Product Information

AO4882-MS

AO4882-MS electronic component of MSKSEMI

Datasheet
40V 6A 25mΩ@10V,6A 1.9W 1.6V@250uA 76pF@15V 2 N-Channel 1.013nF@15V 9.8nC@4.5V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS

Manufacturer: MSKSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

5: AUD 0.3097 ( AUD 0.34 Inc GST) ea
Line Total: AUD 1.5485 ( AUD 1.7 Inc GST)

13469 - Global Stock
Ships to you between
Mon. 29 Jul to Thu. 01 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
13081 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 5
Multiples : 5

Stock Image

AO4882-MS
MSKSEMI

5 : AUD 0.3159
50 : AUD 0.2571
150 : AUD 0.232
500 : AUD 0.2006
3000 : AUD 0.1738
6000 : AUD 0.1655

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

The AO4882-MS 40V 6A 25mO@10V,6A 1.9W 1.6V@250uA 76pF@15V 2 N-Channel 1.013nF@15V 9.8nC@4.5V -55?~+150?@(Tj) SOP-8 manufactured by MSKSEMI is a RoHS certified, low-voltage MOSFET that features two N-Channel MOSFETs in a 8-pin SOP package. It has a drain-source voltage of 40V, drain current of 6 amps, a maximum drain-source resistance of 25 mO @10V, and a power dissipation of 1.6V @250uA. It also features a 76pF gate-source capacitance @15V, 1.013nF drain-source capacitance @15V, and 9.8nC gate-source forward transconductance @4.5V. This component has a reliable junction temperature range of -55? to +150?@(Tj) and an operating temperature of -55? to +150?.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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