Product Information

LPM8205B6F

LPM8205B6F electronic component of LOWPOWER

Datasheet
MOSFET 2 N Channel (Dual) 20V 7.6A 1.1V @ 250uA 23 mΩ @ 7.6A,10V SOT23-6 RoHS

Manufacturer: LOWPOWER
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

10: AUD 0.1389 ( AUD 0.15 Inc GST) ea
Line Total: AUD 1.389 ( AUD 1.53 Inc GST)

0 - Global Stock
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 10
Multiples : 10

Stock Image

LPM8205B6F
LOWPOWER

10 : AUD 0.1389
100 : AUD 0.1157
300 : AUD 0.0988
1000 : AUD 0.0851
5000 : AUD 0.0825
10000 : AUD 0.0814

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

LABThe LPM8205B6F is a dual N-Channel MOSFET manufactured by LOWPOWERLAB. It is a small surface-mount device that is packaged in a standard SOT23-6 RoHS package. It has a maximum drain-source voltage of 20V, with a continuous drain current of 7.6A and a low threshold voltage of 1.1V @ 250uA. It has a low resistance of 23 mΩ @ 7.6A and 10V. It is suitable for use in power supply and switching applications and can be found in a variety of industries including automotive, industrial, and consumer electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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