The LOWPOWER LPM3413B3F is a dual N-channel MOSFET power device, designed specifically for low voltage, low power applications. It is housed in a SOT-23-3 RoHS package and is capable of dissipating up to 3A of current. The threshold voltage is 1V with a maximum drain-source on-resistance of 95m? @3A and 4.5V of gate-source voltage. The device features a blazing fast 20V P Trench Technology with maximum of 250uA turn-on gate charge. Ideal for switching applications in the automotive, industrial and consumer markets.