Product Information

JST80N30T2A

JST80N30T2A electronic component of JESTEK

Datasheet
MOSFET N Trench 30V 90A (Tc) 2.5V @ 250uA 5 mΩ @ 20A,10V TO-252-2L RoHS

Manufacturer: JESTEK
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.4714 ( AUD 0.52 Inc GST) ea
Line Total: AUD 0.4714 ( AUD 0.52 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1

Stock Image

JST80N30T2A
JESTEK

1 : AUD 0.3859
10 : AUD 0.3159
30 : AUD 0.2859
100 : AUD 0.2484
500 : AUD 0.2319
1000 : AUD 0.2218

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

The JST80N30T2A with MOSFET N Trench 30V 90A (Tc) 2.5V @ 250uA 5 mO @ 20A,10V TO-252-2L RoHS is a single trench MOSFET transistor manufactured by JESTEK. It is designed for high speed switching applications and is optimized to support a wide range of operating voltages. Its maximum drain-to-source voltage (VDS) is 30V and its maximum drain current (ID) is 90A. It has a low gate charge (Qc) of 2.5V @ 250uA and a low on-resistance (RDSon) of 5 mO @ 20A,10V. It has a TO-252-2L package, which is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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