Product Information

JST4435

JST4435 electronic component of JESTEK

Datasheet
MOSFET P Trench 30V 10A (Tc) 2.4V @ 250uA 23 mΩ @ 9.1A,10V SOP-8 RoHS

Manufacturer: JESTEK
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

5: AUD 0.1986 ( AUD 0.22 Inc GST) ea
Line Total: AUD 0.993 ( AUD 1.09 Inc GST)

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 5
Multiples : 5

Stock Image

JST4435
JESTEK

5 : AUD 0.1926
50 : AUD 0.1592
150 : AUD 0.1427
500 : AUD 0.1302
2500 : AUD 0.1201
4000 : AUD 0.1151

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

The JST4435 is a MOSFET P Trench 30V 10A, SOP-8 RoHS device manufactured by JESTEK. It has a maximum drain-source voltage (Vdss) of 30V and a drain-source current (Ids) of up to 10A. Its thermal characteristics include a maximum junction temperature of 2.4V @ 250uA, a on-state resistance of 23mO @ 9.1A, and a maximum gate-source voltage (Vgss) of 10V. It is RoHS compliant and is ideal for power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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