IRLTS2242PbF HEXFET Power MOSFET V -20 V DSS A 1 6 D D V 12 V GS 2 5 R max D DS(on) D 32 m ( V = -4.5V) GS R max 3 4 DS(on) G S 55 m ( V = -2.5V) GS Q 12 nC Top View g (typical) TSOP-6 I D -6.9 A ( T = 25C) A Applications Battery operated DC motor inverter MOSFET System/Load Switch Features Benefits Industry-Standard TSOP-6 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRLTS2242TRPbF TSOP-6 Tape and Reel 3000 IRLTS2242TRPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage - 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V -6.9 D A GS I T = 70C Continuous Drain Current, V 4.5V -5.5 D A GS A I Pulsed Drain Current -55 DM P T = 25C Power Dissipation 2.0 D A W P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A DSS GS D Breakdown Voltage Temp. Coefficient 9.4 mV/C Reference to 25C, I = -1mA BV /T D DSS J R Static Drain-to-Source On-Resistance 26 32 V = -4.5V, I = -6.9A DS(on) GS D m 45 55 V = -2.5V, I = -5.5A GS D V Gate Threshold Voltage -0.4 -1.1 V GS(th) V = V , I = -10A DS GS D V Gate Threshold Voltage Coefficient -3.8 mV/C GS(th) I Drain-to-Source Leakage Current -1.0 V = -16V, V = 0V DSS DS GS A -150 V = -16V, V = 0V,T = 125C DS GS J I Gate-to-Source Forward Leakage -100 V = -12V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 12V GS gfs Forward Transconductance 8.5 S V = -10V, I = -5.5A DS D Q Total Gate Charge 12 V = -10V g DS Q Pre-Vth Gate-to-Source Charge 1.5 nC V = -4.5V gs GS I = -5.5A Q Gate-to-Drain Charge 4.3 gd D R Gate Resistance 17 G t Turn-On Delay Time 5.8 V = -10V, V = -4.5V d(on) DD GS t Rise Time 18 ns I = -5.5A r D t Turn-Off Delay Time 81 d(off) R = 6.8 G t Fall Time 68 f C Input Capacitance 905 V = 0V iss GS C Output Capacitance 280 pF V = -10V oss DS C Reverse Transfer Capacitance 200 = 1.0KHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.0 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM S -55 (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -5.5A, V =0V SD J S GS t Reverse Recovery Time 41 62 ns T = 25C, I = -5.5A, V = -16V rr J F DD Q Reverse Recovery Charge 16 24 nC di/dt = 100A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Ambient 62.5 C/W R JA Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: