TechnologiesThe Infineon Technologies IRFB4110PBF is a N-channel, enhancement-mode power MOSFET with Trench technology in a TO-220-3 package. It has a max VDS (Drain-Source Voltage) of 100V, rDS(on) (Drain-Source On Resistance) of 4.5 mOhms at 75A and an ID (Continuous Drain Current) of 120A. It also has a maximum gate threshold voltage of 4V and a gate-source leakage current of 250uA, making it suitable for a variety of high-power applications. The TO-220-3 package is RoHS compliant, making it a safe option for environmental protection.