The IRFB3206PBF Transistor made by Infineon is a N-MOSFET unipolar transistor with a maximum drain source voltage of 60V, maximum continuous drain current of 150A, and a maximum power dissipation of 300W. It comes in a TO220AB package with a fast body diode and integrated gate protection. It has a low gate charge, which makes it suitable for high frequency applications. Additionally, it has a low on-resistance and excellent avalanche energy capabilities.