Product Information

IPT65R195G7XTMA1

Hot IPT65R195G7XTMA1 electronic component of Infineon

Datasheet
MOSFET HIGH POWER_NEW

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

29: AUD 2.175 ( AUD 2.39 Inc GST) ea
Line Total: AUD 63.075 ( AUD 69.38 Inc GST)

1577 - Global Stock
Ships to you between
Mon. 22 Jul to Fri. 26 Jul
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
34 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 7.1831
250 : AUD 6.7938
500 : AUD 6.3869
1000 : AUD 5.4669
2000 : AUD 4.5292
4000 : AUD 4.4585

1577 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 29
Multiples : 1
29 : AUD 2.175
50 : AUD 2.1726

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
Transistor Type
Brand
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Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

IPT65R195G7 MOSFET HSOF 650V CoolMOS C7 Gold series (G7) SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of Tab the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible Tab SMD solution for high current topologies such as PFC up to 3kW 1 2 3 8 4 7 5 Features 6 6 7 5 8 4 3 C7 Gold gives best in class FOM R *E and R *Q . 2 DS(on) oss DS(on) g 1 C7 Gold technology enables best in class R in smallest footprint. DS(on) th TOLL package has inbuilt 4 pin Kelvin Source configuration and low parasitic source inductance (~1nH). TOLL package is MSL1 compliant, total Pb-free and has easy visual inspection grooved leads. Drain Tab TOLL SMD package combined with lead free die attach process enables improved thermal performance R . th *1 Gate Pin 1 Benefits Driver Source Source C7 Gold FOM R *Q is 14% better than previous C7 650V enabling Pin 2 DS(on) g Pin 3-8 faster switching leading to higher efficiency. *1: Internal body diode 2 C7 Gold can reach 33m in in TOLL 115mm footprint, whereas previous 2 2 BIC C7 650V was 45m in 150mm D PAK footprint. Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. TOLL package is easy to use and has the highest quality standards. Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible. Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 195 m DS(on),max Q 20 nC g.typ I 41 A D,pulse ID,continuous Tj<150C 18 A E 400V 2.3 J oss Body diode di/dt 60 A/s Type / Ordering Code Package Marking Related Links IPT65R195G7 PG-HSOF-8 65R195G7 see Appendix A Final Data Sheet 1 Rev. 2.3, 2020-10-28650V CoolMOS C7 Gold series (G7) SJ Power Device IPT65R195G7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.3, 2020-10-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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