Product Information

BSS209PWH6327XTSA1

BSS209PWH6327XTSA1 electronic component of Infineon

Datasheet
Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

3000: AUD 0.0643 ( AUD 0.07 Inc GST) ea
Line Total: AUD 192.9 ( AUD 212.19 Inc GST)

1457910 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
29100 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3000
Multiples : 3000
3000 : AUD 0.0942
9000 : AUD 0.0766
24000 : AUD 0.0758
45000 : AUD 0.0698
99000 : AUD 0.069

540 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.6092
10 : AUD 0.402
25 : AUD 0.3732
100 : AUD 0.166
250 : AUD 0.1568
500 : AUD 0.0952

1457910 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3000
Multiples : 3000
3000 : AUD 0.0643

49396 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.4777
10 : AUD 0.3008
100 : AUD 0.1238
1000 : AUD 0.1044
3000 : AUD 0.0832
9000 : AUD 0.0708
24000 : AUD 0.0672
45000 : AUD 0.0672
99000 : AUD 0.0655

2660 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 10
Multiples : 1
10 : AUD 0.284
50 : AUD 0.17
211 : AUD 0.118
580 : AUD 0.112
3000 : AUD 0.11

29100 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3000
Multiples : 3000
3000 : AUD 0.0942
9000 : AUD 0.0766
24000 : AUD 0.0758
45000 : AUD 0.0698
99000 : AUD 0.069

34895 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 518
Multiples : 1
518 : AUD 0.1238

540 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 172
Multiples : 1
172 : AUD 0.166
250 : AUD 0.1568
500 : AUD 0.0952

     
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features V -20 V DS P-Channel R 550 m DS(on),max Enhancement mode I -0.63 A D Super Logic level ( 2.5 V rated) 150C operating temperature PG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry =25 C, unless otherwise specified Maximum ratings, at T j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C -0.63 A D C T =70 C -0.5 C Pulsed drain current I T =25 C -2.5 D,pulse C I = -0.63 A, D E 4.0 Avalanche energy, single pulse mJ AS R =25 GS I = -0.63 A, D V =-16 V, DS -6 Reverse diode dv /dt dv /dt kV/s di /dt =-200 A/s, T =150 C j,max Gate source voltage V 12 V GS Power dissipation P T =25 C 0.30 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-C101 (HBM) 0 (max 250V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.32 page 1 2011-07-13BSS 209PW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 120 K/W thJS junction - soldering point minimal footprint R SMD version, device on PCB: - - 420 thJA 2 1) - - 350 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250A Drain-source breakdown voltage -20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =3.5 A -0.6 -0.9 -1.2 GS(th) DS GS D V =-20 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-20 V, V =0 V, DS GS - -10 -100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =0.46 A - 581 900 DS(on) GS D V =4.5 V, I =0.63 A - 379 550 GS D V >2 I R , DS D DS(on)max g Transconductance 0.87 1.74 - S fs I =0.46 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t10 sec. Rev. 1.32 page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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