The BSS139H6327XTSA1 Transistor from Infineon is a unipolar N-MOSFET featuring 250V of drain-source breakdown voltage, 0.1A of continuous drain current at 25°C, and 0.36W of on-state power dissipation at 25°C. This device is housed in a 3-pin SOT23 package and provides improved temperature stability and lower gate charge compared to the standard version. The BSS139H6327XTSA1 is designed to be used for load switching applications.