Product Information

BSP297H6327XTSA1

BSP297H6327XTSA1 electronic component of Infineon

Datasheet
Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.3004 ( AUD 1.43 Inc GST) ea
Line Total: AUD 1.3004 ( AUD 1.43 Inc GST)

90573 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1000
Multiples : 1000
1000 : AUD 0.6786
2000 : AUD 0.6288
5000 : AUD 0.6048
10000 : AUD 0.5768
25000 : AUD 0.5608

90573 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 1.3004
10 : AUD 1.0792
100 : AUD 0.8015
500 : AUD 0.69
1000 : AUD 0.5591
2000 : AUD 0.5325
5000 : AUD 0.5325
10000 : AUD 0.5113
25000 : AUD 0.4972

981 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1
1 : AUD 1.6
10 : AUD 1.362
25 : AUD 1.182
38 : AUD 0.674
105 : AUD 0.636

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

BSP297H6327XTSA1 is a high-voltage N-channel MOSFET from Infineon Technologies. This part has a maximum drain-source voltage (VDS) of 600V and a maximum drain current (ID) of 12A. It is housed in a TO-263-3L package, has a total gate charge (Qg) of 13.3nC and can operate at frequencies up to 30MHz. In addition, it has an on-resistance (RDSon) of 0.0080 Ohms and a threshold voltage (Vth) of 4.2V. It is RoHS-compliant and halogen-free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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