Product Information

BSC047N08NS3G

BSC047N08NS3G electronic component of Infineon

Datasheet
MOSFET N Channel 80V 18A 3.5V @ 90uA 4.7mO @ 50A,10V PG-TDSON-8 RoHS

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

5000: AUD 1.4 ( AUD 1.54 Inc GST) ea
Line Total: AUD 7000 ( AUD 7700 Inc GST)

582000 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
2396 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 1
Multiples : 1

Stock Image

BSC047N08NS3G
Infineon

1 : AUD 2.3683
10 : AUD 2.1808
30 : AUD 2.063
100 : AUD 1.7913
500 : AUD 1.7384
1000 : AUD 1.7143

582000 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 5000
Multiples : 5000

Stock Image

BSC047N08NS3G
Infineon

5000 : AUD 1.4

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

The BSC047N08NS3G is a power Field-Effect Transistor (FET) manufactured by Infineon. It is an N-channel Metal-Oxide-Semiconductor FET (MOSFET) and is meant for use in high-power applications. It has an operating voltage of 80V and can handle up to 18A. It also has a threshold voltage of 3.5V and a low on-state resistance of 4.7mohms. It is packaged in a PG-TDSON-8 package and is compliant with RoHS regulations.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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