AUTOMOTIVE GRADE Features Advanced Planar Technology P-Channel MOSFET D V -55V (BR)DSS Dynamic dV/dT Rating 175C Operating Temperature R max. 0.10 DS(on) Fast Switching G Fully Avalanche Rated I S -19A D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D Description S Specifically designed for Automotive applications, D G this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve TO-220AB low on-resistance per silicon area. This benefit AUIRF9Z34N combined with the fast switching speed and ruggedized device design that HEXFET power G D S MOSFETs are well known for, provides the designer Gate Drain Source with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V -19 GS D C Continuous Drain Current, V 10V -14 I T = 100C A GS D C -68 I Pulsed Drain Current DM Power Dissipation 68 W P T = 25C D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 20 V GS E 180 AS Single Pulse Avalanche Energy (Thermally Limited) mJ I -10 Avalanche Current A AR E 6.8 Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case ) 300 Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.2 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R JA Junction-to-Ambient 62 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A GS D V /T Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = -1mA (BR)DSS J D R DS(on) Static Drain-to-Source On-Resistance 0.10 V = -10V, I = -10A GS D V GS(th) Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250 A DS GS D gfs Forward Transconductance 4.2 S V = -25V, I = -10A DS D I Drain-to-Source Leakage Current -25 A = -55V, V = 0V DSS V DS GS -250 V = -44V, V = 0V, T = 150C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 35 I = -10A D Q gs Gate-to-Source Charge 79 nC V = -44V DS Q Gate-to-Drain Mille) Charge 16 V = -10V, See Fig. 6 & 13 gd GS t d(on) Turn-On Delay Time 13 V = -28V DD t r Rise Time 55 I = -10A D t d(off) Turn-Off Delay Time 30 ns R = 13 G t Fall Time 41 R = 2.6, See Fig. 10 f D L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 620 V = 0V GS C oss Output Capacitance 280 pF V = -25V DS C rss Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current -19 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current -68 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C, I = -10A, V = 0V SD J S GS t Reverse Recovery Time 54 82 ns T = 25C, I = -10A rr J F di/dt = 100A/ s Q Reverse Recovery Charge 110 160 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on % & ()* + & , -* & * . & / 0 1 I / 0* / 2 0 3 * 4 4 * % 5 () SD 6 , 3 7 R is measured at TJ approximately 90C.