D3S280N65 650V, 280m, 14.1 A Super Junction Power MOSFET Ordering Information Part Number Package Option D3S280N65B-U TO-220 D3S280N65E-T TO-263 TO-220 TO-263 TO-220 FullPak D3S280N65F-U TO-220 FullPak (FP) Device Schematic Description Drain (Pin 2, Tab) TM +FET is an advanced Super Junction Power MOSFET offering excellent efficiency through low Rds-ON and low gate charge. Gate TM +FET is a rugged device with precision charge balance (Pin 1) implementation designed for demanding uses such as enterprise Source (Pin 3) power computing power supplies, motor control, lighting and other challenging power conversion applications. Features Benefits LOW R DS(ON) LOW CONDUCTION LOSSES FAST SWITCHING HIGH EFFICIENCY HIGH E AS REL TEST SPEC: JESD-22 EXCELLENT AVALANCHE PERFORMANCE LOW OUTPUT CAPACITANCE Table 1 Key Performance Parameters Applications Parameters Value Unit POWER FACTOR CORRECTION V T 710 V DS J max SERVER POWER SUPPLIES RDS(on),max <280 m TELECOM POWER SUPPLIES 22 nC Q ,typ g INVERTERS I 14 A D 25C MOTOR CONTROL Coss 41 pf Copyright D3 Semiconductor. All rights reserved. Jan 2019. Rev. 2.0 1/16 D3S280N65 Table of contents Description-------------------------------------------------------------------------------------------------1 Maximum ratings-----------------------------------------------------------------------------------------3 Thermal characteristics---------------------------------------------------------------------------------3 Electrical characteristic---------------------------------------------------------------------------------4 Electrical characteristics diagrams------------------------------------------------------------------6 Test Circuit & Waveform------------------------------------------------------------------------------11 Revision---------------------------------------------------------------------------------------------------16 Copyright D3 Semiconductor. All rights reserved. Jan 2019. Rev. 2.0 2/16