D3S190N65x
650V, 190m, 15.2A N-Channel Enhancement Mode Super Junction Power MOSFET
Package Options
Ordering Information
Part Number Package Option
D3S190N65B-U TO-220
D3S190N65E-U TO-263
TO-220 TO-263 TO-220 FullPak
D3S190N65U-U TO-220 FullPak (FP)
Device Schematic
Drain (Pin 2, Tab)
Description
TM
+FET is an advanced Super Junction Power MOSFET offering
excellent efficiency through low R and low gate
DS(ON)
TM
charge. +FET is a rugged device with precision charge
Gate
(Pin 1)
balance implementation designed for demanding uses such as
Source
enterprise power computing power supplies, motor control,
(Pin 3)
lighting and other challenging power conversion applications.
Features Benefits
LOW CONDUCTION LOSSES
LOW R
DS(ON)
HIGH EFFICIENCY
FAST SWITCHING
EXCELLENT AVALANCHE PERFORMANCE
HIGH E
AS
REL TEST SPEC: JESD-22
HTRB, H3TRB TESTED >3000 HRS
Table 1 Key Maximum Parameters
Applications
Parameter 220/263 220FP Unit
POWER FACTOR CORRECTION
V @ T 710 710 V
DSS jmax
SERVER POWER SUPPLIES
RDS(on) max < 190 <190 m
TELECOM POWER SUPPLIES
Qg typ 28 28 nC
I @ 25 C 25.8 13.5 A INVERTERS
Dmax
MOTOR CONTROL
Copyright D3 Semiconductor 2017 All Rights Reserved
D3S190N65x
Contents
Contents ............................................................................................................................................................... 2
1. Maximum Ratings ........................................................................................................................................ 3
2. Thermal Characteristics ............................................................................................................................... 4
3. Electrical Characteristics .............................................................................................................................. 5
4. Electrical Characteristics Graphs ................................................................................................................. 7
5. Package Outlines ........................................................................................................................................ 14
6. Revision History ......................................................................................................................................... 17
7. Resources ................................................................................................................................................... 17
8. Patents, Copyrights and Trademarks ......................................................................................................... 17
9. Legal Disclaimer ......................................................................................................................................... 17
2
Copyright D3 Semiconductor 2017 All Rights Reserved