Product Information

D3S080N65B-U

D3S080N65B-U electronic component of D3 Engineering

Datasheet
MOSFET 80 mOhm 650V Superjunction Power MOSFET in TO-220

Manufacturer: D3 Engineering
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1000: AUD 3.75 ( AUD 4.12 Inc GST) ea
Line Total: AUD 3750 ( AUD 4125 Inc GST)

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1000
Multiples : 1000

Stock Image

D3S080N65B-U
D3 Engineering

1000 : AUD 4.1189
2500 : AUD 3.9549
5000 : AUD 3.8115

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

D3S080N65 650V, 80m, 40.8 Amp Super Junction Power Package Options Ordering Information Part Number Package Option D3S080N65B-U TO-220 D3S080N65D-U TO-247 D3S080N65E-U TO-263 D3S080N65F-U TO-220 Fullpak Device Schematic Description Drain (Pin 2, Tab) TM +FET is an advanced Super Junction Power MOSFET offering excellent efficiency through low Rds-ON and low gate TM charge. +FET is a rugged device with precision charge balance implementation designed for demanding uses such as Gate enterprise power computing power supplies, motor control, (Pin 1) Source lighting and other challenging power conversion applications. (Pin 3) Features Benefits LOW R DS(ON) LOW CONDUCTION LOSSES FAST SWITCHING HIGH EFFICIENCY HIGH E EXCELLENT AVALANCHE PERFORMANCE AS REL TEST SPEC: JESD-22 HTRB >3000 HRS Table 1 Key Parameters Applications Parameter Value Unit POWER FACTOR CORRECTION V T 710 V DSS jmax SERVER POWER SUPPLIES RDS(on) max < 80 m TELECOM POWER SUPPLIES Qg typ 77 nC I 25 C 40.8 A D INVERTERS MOTOR CONTROL Copyright D3 Semiconductor 2016 All Rights Reserved D3S080N65 Contents Contents ....................................................................................................................................................................... 2 Maximum Ratings ........................................................................................................................................................ 3 Thermal Characteristics ............................................................................................................................................... 4 Electrical Characteristics .............................................................................................................................................. 5 Electrical Characteristics Graphs .................................................................................................................................. 7 Revision History.......................................................................................................................................................... 16 Resources ................................................................................................................................................................... 16 Patents, Copyrights and Trademarks ......................................................................................................................... 16 2 Copyright D3 Semiconductor 2016 All Rights Reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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