The CEH2609 MOSFET produced by Chino-Excel is a N- and P-Channel Trench MOSFET with 20V breakdown voltage and 3.5A and 2.5A continuous drain currents and 1.2V on-state voltage at 250uA gate current. The maximum gate threshold voltage is 4.5V with a gate-source on resistance of 60mO at 3.5A drain current and 100mO at 2.5A drain current. This component is a TSOP-6 RoHS package.