Product Information

CMPDM7002AG TR

CMPDM7002AG TR electronic component of Central Semiconductor

Datasheet
Central Semiconductor MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs

Manufacturer: Central Semiconductor
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Price (AUD)

1: AUD 1.0738 ( AUD 1.18 Inc GST) ea
Line Total: AUD 1.0738 ( AUD 1.18 Inc GST)

85319 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29705 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

CMPDM7002AG TR
Central Semiconductor

1 : AUD 0.7325
10 : AUD 0.5715
100 : AUD 0.3149
1000 : AUD 0.2318
3000 : AUD 0.2052
9000 : AUD 0.1875
24000 : AUD 0.1875
45000 : AUD 0.1875
99000 : AUD 0.1858

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

CMPDM7002A CMPDM7002AG* www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002A MOSFET and CMPDM7002AG are special versions of the 2N7002 enhancement-mode N-Channel MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special devices offer low r DS(ON) and low V DS (ON). MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G SOT-23 CASE * Device is Halogen Free by design MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 40 V GS Continuous Drain Current I 280 mA D Continuous Source Current (Body Diode) I 280 mA S Maximum Pulsed Drain Current I 1.5 A DM Maximum Pulsed Source Current I 1.5 A SM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =60V, V=0 1.0 A DSS DS GS I V =60V, V =0, T=125C 500 A DSS DS GS J I V =10V, V=10V 500 mA D(ON) GS DS BV V =0, I=10A 60 V DSS GS D V V =V , I=250A 1.0 2.5 V GS(th) DS GS D V V =10V, I=500mA 1.0 V DS(ON) GS D V V =5.0V, I =50mA 0.15 V DS(ON) GS D V V =0, I=400mA 1.2 V SD GS S r V =10V, I=500mA 2.0 DS(ON) GS D r V =10V, I =500mA, T=125C 3.5 DS(ON) GS D J r V =5.0V, I=50mA 3.0 DS(ON) GS D r V =5.0V, I =50mA, T=125C 5.0 DS(ON) GS D J g V =10V, I=200mA 80 mS FS DS D C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS R5 (9-February 2015)CMPDM7002A CMPDM7002AG* SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =30V, V =4.5V, I=100mA 0.592 nC g(tot) DS GS D Q V =30V, V =4.5V, I=100mA 0.196 nC gs DS GS D Q V =30V, V =4.5V, I=100mA 0.148 nC gd DS GS D t , t V =30V, V =10V, I=200mA, on off DD GS D R =25, R=150 20 ns G L SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G * Device is Halogen Free by design R5 (9-February 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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