Product Information

CEDM7001 TR

CEDM7001 TR electronic component of Central Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.2007 ( AUD 1.32 Inc GST) ea
Line Total: AUD 1.2007 ( AUD 1.32 Inc GST)

154890 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
261640 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

CEDM7001 TR
Central Semiconductor

1 : AUD 0.4441
10 : AUD 0.4069
100 : AUD 0.345
500 : AUD 0.2972
1000 : AUD 0.2778
8000 : AUD 0.276
24000 : AUD 0.2742

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

CEDM7001 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7001 is MOSFET an N-Channel Enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r and DS(ON) low theshold voltage. MARKING CODE: H COMPLEMENTARY P-CHANNEL: CEDM8001 SOT-883L CASE FEATURES: 100mW Power Dissipation 0.4mm low package profile Low r APPLICATIONS: DS(ON) Load/Power switches Low threshold voltage DC - DC converters Logic level compatible Battery powered portable equipment Small leadless surface mount package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current (Steady State) I 100 mA D Peak Drain Current, tp=10s I 200 mA DM Power Dissipation P 100 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =10V, V=0 1.0 A GSSF GSSR GS DS I V =20V, V=0 1.0 A DSS DS GS BV V =0, I=100A 20 V DSS GS D V V =V , I=250A 0.6 0.9 V GS(th) DS GS D r V =4.0V, I=10mA 0.9 3.0 DS(ON) GS D r V =2.5V, I=10mA 1.3 4.0 DS(ON) GS D r V =1.5V, I=1.0mA 15 DS(ON) GS D g V =10V, I=100mA 100 mS FS DS D C V =3.0V, V =0, f=1.0MHz 4.0 pF rss DS GS C V =3.0V, V =0, f=1.0MHz 9.0 pF iss DS GS C V =3.0V, V =0, f=1.0MHz 9.5 pF oss DS GS Q V =10V, V =4.5V, I=100mA 0.566 nC g(tot) DS GS D Q V =10V, V =4.5V, I=100mA 0.16 nC gs DS GS D Q V =10V, V =4.5V, I=100mA 0.08 nC gd DS GS D t V =3.0V, V =2.5V, I=10mA 50 ns on DD GS D t V =3.0V, V =2.5V, I=10mA 75 ns off DD GS D R9 (19-September 2014)CEDM7001 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: H Package Type Options (all dimensions are maximum - in mm) Package Length Width Height P (mW) Central Item Number D SOT-883L 1.05 0.65 0.40 100 CEDM7001 SOT-883VL 1.05 0.65 0.32 100 CEDM7001VL SOT-953 1.05 1.05 0.50 250 CMNDM7001 SOT-523 1.70 1.70 0.78 250 CMUDM7001 R9 (19-September 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Central Semi
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Central Semiconductor Corp.

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