About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Technology
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ018NE2LSI


Infineon Technologies MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
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Infineon 63912
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AUD 1.4932
Multiples of: 1

40 A25 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8-Si1 Channel20 V48 nCEnhancement Optimos
BSC146N10LS5ATMA1


MOSFET TRENCH >=100V
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Infineon 63772
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AUD 1.0208
Multiples of: 1

           Cut Tape       
BSS139 H6327


Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
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Infineon 63657
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AUD 0.2282
Multiples of: 1

100 mA250 V14 OhmsN - Channel 2.1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel10 V2.3 nCDepletionAec - Q101 
IPD30N06S2L23ATMA3


Infineon Technologies MOSFET
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Infineon 63418
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AUD 0.8015
Multiples of: 1

30 A55 V15.9 mOhmsN - Channel 1.6 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V33 nCEnhancementAec - Q101 
IRLML2244TRPBF


MOSFET P Trench 20V 4.3A 1.1V @ 10uA 54 mΩ @ 4.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 62346
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AUD 0.1274
Multiples of: 1

            Hexfet®      
IRFS4410ZTRLPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-263-2 RoHS
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Infineon 61304
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AUD 1.8
Multiples of: 800

97 A100 V9 mOhmsN - Channel 4 V + 175 C230 WSmd/SmtD2PAKReelSi1 Channel 120 nC   
Hot IRFB3206PBF


Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
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Infineon 60989
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AUD 0.9062
Multiples of: 1

210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IRF6648TRPBF


N-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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Infineon 60928
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AUD 1.6578
Multiples of: 1

            Hexfet®      
IPD053N08N3GATMA1


Infineon Technologies MOSFET
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Infineon 59623
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AUD 1.84
Multiples of: 1

90 A80 V5.3 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V52 nCEnhancement Optimos
SN7002W H6327


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-323-3
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Infineon 59386
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AUD 0.0672
Multiples of: 1

230 mA60 V2.3 OhmsP - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 20 V1 nCEnhancement  
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