About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOB10B65M1


TO-263 IGBTs ROHS
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Alpha & Omega 694
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AUD 1.1904
Multiples of: 1

                
RGTV60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM 694
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AUD 4.406
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
RGCL60TS60GC11


IGBT Trench Field Stop 600 V 48 A 111 W Through Hole TO-247N
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ROHM 691
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AUD 3.2023
Multiples of: 1

Single600 V1.4 V30 V48 A200 nA  TO - 247 - 3BulkSiThrough Hole111 W- 40 C+ 175 C 
FGB7N60UNDF


IGBT Transistors 600V 7A NPT IGBT
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ON Semiconductor 688
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AUD 1.6401
Multiples of: 1

Single600 V2.1 V+/- 20 V14 A+/- 10 uA83 W TO - 263AB (D2 PAK)TubeSiSmd/Smt83 W- 55 C+ 150 CFgb7n60undf
IKFW75N65EH5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon 683
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AUD 9.2
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
SGB02N60


IGBT Transistors FAST IGBT NPT TECH 600V 2A
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Infineon 671
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AUD 1.4519
Multiples of: 1

Single600 V +/- 20 V    TO - 263 - 3ReelSiSmd/Smt - 55 C+ 150 CSgb02n60
IGW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 663
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AUD 3.3615
Multiples of: 1

      217 W   Trenchstop 3    H3
IGP50N60TXKSA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-220AB
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Infineon 661
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AUD 3.5562
Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 220 - 3TubeSiThrough Hole333 W- 40 C+ 175 CTrenchstop Igbt
IKP20N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 659
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AUD 2.1408
Multiples of: 1

Single650 V1.65 V20 V42 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 40 C+ 175 CTrenchstop 5 H5
FGA25N120ANTDTU_F109


IGBT Transistors Copak Discrete
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ON Semiconductor 659
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AUD 3.7786
Multiples of: 1

Single1200 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga25n120antdtu
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