About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD15N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2243
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AUD 1.6102
Multiples of: 1

Single600 V2.2 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
IDW40E65D2


Infineon Technologies IGBT Transistors IGBT PRODUCTS Rapid Switching
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Infineon 2222
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AUD 2.1585
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         TubeSi    Idw40e65
IMBG120R350M1HXTMA1


N-Channel 1.2kV 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
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Infineon 2213
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AUD 5.8738
Multiples of: 1

        TO - 263 - 8 , D²PAK (7 Leads + Tab) , TO - 263CATape And ReelSic (Silicon Carbide Junction Transistor)    Coolsic
SGT40N60FD2PN


TO-3P-3 IGBTs ROHS
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Silan 2199
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AUD 1.6431
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STGD10NC60KDT4


Transistor: IGBT; 600V; 10A; 62W; DPAK
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STMicroelectronics 2182
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AUD 1.8365
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      62 W         
STGD4M65DF2


IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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STMicroelectronics 2162
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AUD 0.8416
Multiples of: 1

Single650 V1.6 V+/- 20 V8 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt68 W- 55 C+ 175 CStgd4m65df2
IKD06N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2052
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AUD 0.8174
Multiples of: 1

Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
IGW40N120H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2036
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AUD 6.6125
Multiples of: 1

         Tube      
NCE10TD60BK


TO-252-2 IGBTs ROHS
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NCE Power 1998
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AUD 0.5124
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IKD15N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 30A
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Infineon 1997
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AUD 2.1
Multiples of: 1

Single600 V1.65 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
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