The SGT40N60FD2PN is a TO-3P-3 Insulated Gate Bipolar Transistor (IGBT) manufactured by Silan. It features low losses, high speed, low noise operation and low on-state voltage drop. The device has an inverse parallel (IPS) mounting which means that the current travels in alternate directions in the anode and the cathode terminals. It also has a high junction temperature, up to 175°C, providing increased reliability and makes it suitable for use in automotive, industrial, and consumer applications. The SGT40N60FD2PN is RoHS compliant and is offered in a TO-3P package.