About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 16490
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AUD 2.614
Multiples of: 1000

         ReelSi    600 - 650V Igbts
STGD3HF60HDT4


IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
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STMicroelectronics 12125
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AUD 0.7422
Multiples of: 2500

 600 V2.95 V20 V7.5 A100 nA38 W DPAKReelSiSmd/Smt38 W- 55 C+ 150 CStgd3hf60hd
STGD6NC60HDT4


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 9700
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AUD 1.015
Multiples of: 2500

Single600 V1.9 V+/- 20 V 100 nA50 W DPAK - 3ReelSiSmd/Smt50 W- 55 C+ 150 CStgd6nc60hd
STGP19NC60KD


IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics 9213
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AUD 1.209
Multiples of: 1

Single600 V +/- 20 V  125 W TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 150 CStgp19nc60kd
STGWA60H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 8730
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AUD 4.204
Multiples of: 1

Single650 V2 V+/- 20 V80 A250 nA  TO - 247 - 3 SiThrough Hole375 W- 55 C+ 175 C600 - 650V Igbts
STGW39NC60VD


Transistor: IGBT; 600V; 40A; 250W; TO247-3
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STMicroelectronics 7988
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AUD 2.7588
Multiples of: 1

      250 W         
STGF10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics 7760
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AUD 1.515
Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf10h60df
STGWA25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics 5238
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AUD 5.3861
Multiples of: 1

Single1200 V2.5 V20 V50 A250 nA    SiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGD6M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 4850
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AUD 1.0964
Multiples of: 1

Single650 V1.55 V20 V12 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgd6m65df2
STGF7NB60SL


IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
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STMicroelectronics 31
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AUD 2.089
Multiples of: 1

Single600 V1.2 V+/- 20 V15 A+/- 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf7nb60sl
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