Package Type: 440166 and 440196
PN: CGHV40030
CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Crees CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications. The datasheet
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.96 - 1.4 GHz (T = 25C) , 50 V
C
Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units
Gain @ P 15.6 15.8 16.6 15.8 dB
SAT
Saturated Output Power 29 30 36 31 W
Drain Efficiency @ P 62 74 64 67 %
SAT
Note:
Measured CW in the CGHV40030-AMP application circuit.
Features
Up to 6 GHz Operation
30 W Typical Output Power
16 dB Gain
Application circuit for 0.96 - 1.4 GHz
70% Efficiency at P
SAT
50 V Operation
Subject to change without notice.
1
www.cree.com/rf
Rev 1.1 - December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage V 125 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 5.2 mA 25C
GMAX
1
Maximum Drain Current I 4.2 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3
Case Operating Temperature T -40, +85 C
C
4
Thermal Resistance, Junction to Case R 5.9 C/W 85C
JC
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/rf/document-library
3
P = 23.4 W
DISS
4
CW
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 5.2 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.6 V V = 50 V, I = 150 mA
GS(Q) DC DS D
2
Saturated Drain Current I 3.9 5.2 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 5.2 mA
(BR)DSS DC GS D
3
RF Characteristics (T = 25C, F = 1.2 GHz unless otherwise noted)
C 0
4
Power Gain G 15 16 - dB V = 50 V, I = 150 mA, P = P
P DD DQ OUT SAT
4
Output Power P 30 35 W V = 50 V, I = 150 mA, P = P
OUT DD DQ OUT SAT
4
Drain Efficiency 62 65 - % V = 50 V, I = 150 mA, P = P
DD DQ OUT SAT
No damage at all phase angles,
4
Output Mismatch Stress VSWR - - 10 : 1 Y
V = 50 V, I = 150 mA, P = 30 W CW
DD DQ OUT
Dynamic Characteristics
5
Input Capacitance C 7.4 pF V = 50 V, V = -8 V, f = 1 MHz
GS DS gs
5
Output Capacitance C 2 pF V = 50 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.15 pF V = 50 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in CGHV40030-AMP
4
P is defined as I = 0.52 mA
SAT G
5
Includes package
Cree, Inc.
4600 Silicon Drive
Copyright 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2
CGHV40030 Rev 1.1