V 1200 V
DS
CAB400M12XM3
I 400 A
DS
1200 V, 400 A All-Silicon Carbide
Switching-Loss Optimized, Half-Bridge Module
Technical Features
Package 80 x 53 x 19 mm
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Third Generation SiC MOSFET
Technology Optimized for Low Switching Loss
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
Vehicle Fast Chargers
Uninterruptable Power Supplies
Smart-Grid / Grid-Tied Distributed Generation
System Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
Key Parameters (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Voltage 1200
DS max
V Gate-Source Voltage, Maximum Value -4 +19 AC frequency 1 Hz Note 1
GS max
V
Gate-Source Voltage, Recommended
V -4 +15 Static
GS op
Operating Value
395 V = 15 V, T = 25 C, T 175 C Fig. 20
GS C VJ
I DC Continuous Drain Current
DS
Note 2
298 V = 15 V, T = 90 C, T 175 C
GS C VJ
I DC Source-Drain Current 395 V = 15 V, T = 25 C, T 175 C
SD GS C VJ
A
I DC Source-Drain Current (Body Diode) 220 V = - 4 V, T = 25 C, T 175 C
SD BD GS C VJ
I Maximum Pulsed Drain-Source Current 800
DS pulsed
t limited by T
j max
P max
V = 15 V, T = 25 C
I Maximum Pulsed Source-Drain Current 800 GS C
SD pulsed
Maximum Virtual Junction
T Temperature under Switching -40 175 C
VJ op
Conditions
Note 1 If MOSFET body diode is not used, V = -8/+19 V
GS max
Note 2 Assumes R = 0.15 C/W and R = 6.4 m. Calculate P = (T T ) / R . Calculate I = (P / R )
TH JC DS on D VJ C TH JC D max D DS on
Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
1MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V = 0 V, I = 400 A
BR DSS GS D
1.8 2.5 3.6 V = V , I = 92 mA
V DS GS D
V Gate Threshold Voltage
GS th
2.0 V = V , I = 92 mA, T = 175 C
DS GS D J
I Zero Gate Voltage Drain Current 4 130 V = 0 V, V = 1200 V
DSS GS DS
A
I Gate-Source Leakage Current 0.04 1.0 V = 15 V, V = 0 V
GSS GS DS
4.0 5.3 V = 15 V, I = 400 A
GS D
Drain-Source On-State Resistance (Devices Fig. 2
R m
DS on
Only) Fig. 3
6.4 V = 15 V, I = 400 A, T = 175 C
GS D J
278 V = 20 V, I = 400 A
DS DS
g Transconductance S Fig. 4
fs
260 V = 20 V, I = 400 A, T = 175 C
DS DS J
Turn-On Switching Energy, T = 25 C 4.1
J
V = 600 V,
E T = 125 C 5.0 DS
on J
I = 400 A,
T = 175 C 5.6
J
D
Fig. 11
mJ V = -4 V/15 V,
GS
Fig. 13
Turn-Off Switching Energy, T = 25 C 3.9
J
R = 0.0 ,
G(ext)
E T = 125 C 4.2
off J
L = 13.6 H
T = 175 C 4.1
J
R Internal Gate Resistance 1.4
G int
C Input Capacitance 24.5
iss
V = 0 V, V = 800 V,
GS DS
nF
C Output Capacitance 1.0 Fig. 9
oss
V = 25 mV, f = 100 kHz
AC
C Reverse Transfer Capacitance 50 pF
rss
Q Gate to Source Charge 256
GS
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 308 nC I = 400 A
D
GD
Per IEC60747-8-4 pg. 21
Q Total Gate Charge 908
G
R FET Thermal Resistance, Junction to Case 0.15 0.16 C/W Fig. 17
TH JC
Body Diode Characteristics (Per Position) (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
6.0 V = -4 V, I = 400 A
GS SD
V Body Diode Forward Voltage V Fig. 7
SD
5.3 V = -4 V, I = 400 A, T = 175 C
GS SD J
t Reverse Recovery Time 44 ns
RR
V = -4 V, I = 400 A, V = 600 V
GS SD R
Q Reverse Recovery Charge 6.5 C
RR
di/dt = 13 A/ns, T = 175 C
J
I Peak Reverse Recovery Current 218 A
RR
Reverse Recovery Energy, T = 25 C 0.3 V = 600 V, I = 400 A,
J DS
D
E T = 125 C 1.0 mJ V = -4 V/15 V, R = 0.0 , Fig. 14
J GS
RR G(ext)
T = 175 C 1.9 L= 13.6 H
J
Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
2