Product Information

VS-VSKDS409/150

VS-VSKDS409/150 electronic component of Vishay

Datasheet
Vishay Discrete Semiconductor Modules Output & SW Modules - AAP SK

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 136.4431 ( AUD 150.09 Inc GST) ea
Line Total: AUD 136.4431 ( AUD 150.09 Inc GST)

87 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
68 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1
1 : AUD 136.4254
10 : AUD 126.5708
20 : AUD 123.8462
50 : AUD 123.8462
100 : AUD 122.8377
200 : AUD 121.44
500 : AUD 121.3338
1000 : AUD 121.2277
2000 : AUD 121.1569

     
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VS-VSKDS409/150 www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Schottky Rectifier, 200 A FEATURES 175 C T operation J Low forward voltage drop High frequency operation UL approved file E78996 Low thermal resistance Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 AAP Gen 7 (TO-240AA) BENEFITS Excellent thermal performances obtained by the usage of PRIMARY CHARACTERISTICS exposed direct bonded copper substrate I 200 A F(AV) High surge capability V 150 V R Easy mounting on heatsink Package AAP Gen 7 (TO-240AA) Circuit configuration Two diodes doubler circuit ELECTRICAL DESCRIPTION / APPLICATIONS The VS-VSKDS409/150 Schottky rectifier doubler module has been optimized for low reverse leakage at high MECHANICAL DESCRIPTION temperature. The proprietary barrier technology allows for The AAP Gen 7, new generation of ADD-A-PAK module, reliable operation up to 175 C junction temperature. combines the excellent thermal performances obtained by Typical applications are in high current switching power the usage of exposed direct bonded copper substrate, with supplies, plating power supplies, UPS systems, converters, advanced compact simple package solution and simplified freewheeling diodes, welding, and reverse battery internal structure with minimized number of interfaces. protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 200 A F(AV) V 150 V RRM I t = 5 s sine 20 000 A FSM p V 200 A , T = 125 C 0.85 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-VSKDS409/150 UNITS Maximum DC reverse voltage V R 150 V Maximum static peak reverse voltage V RRM Revision: 03-May-17 Document Number: 94649 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-VSKDS409/150 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 105 C, rectangular waveform 200 F(AV) C Following any rated 5 s sine or 3 s rect. pulse 20 000 A Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 2300 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.8 A, L = 10 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Maximum dynamic peak reverse voltage V T = 25 C, I = 1.8 A, L = 10 mH 170 V AV J AS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 A 1.03 T = 25 C J 400 A 1.33 Maximum forward voltage drop V V FM 200 A 0.85 T = 125 C J 400 A 1.13 T = 25 C 6 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 85 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 6000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R 3000 (1 min) Maximum RMS insulation voltage V 50 Hz V INS 3600 (1 s) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, R DC operation 0.32 thJC junction to case per leg C/W Typical thermal resistance, R 0.1 thCS case to heatsink per module 75 g Approximate weight 2.7 oz. A mounting compound is recommended and the torque to heatsink 4 Mounting torque 10 % should be rechecked after a period of 3 h to allow for the Nm busbar 3 spread of the compound. Case style JEDEC TO-240AA compatible Revision: 03-May-17 Document Number: 94649 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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