End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: surface-mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 60 Low forward voltage 948553 Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with IR emitter series VEMT3700 Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering VSMS3700 is an infrared, 950 nm emitting diode in GaAs AEC-Q101 qualified technology, molded in a PLCC-2 package for surface Material categorization: for definitions of compliance mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Infrared source in tactile keyboards IR diode in low space applications PCB mounted infrared sensors Emitter in miniature photo-interrupters PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e P r VSMS3700 4.5 60 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity Rev. 1.5, 15-Jul-2020 Document Number: 81373 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life July-2021 - Alternative Device: VSML3710 VSMS3700 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 11, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient J-STD-051, soldered on PCB R 250 K/W thJA 120 180 160 100 140 80 120 100 60 80 R = 250 K/W R = 250 K/W thJA thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090100 21342 21341 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.3 1.7 V F p F Forward voltage I = 1 A, t = 100 s V -1.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.3- mV/K F F VF Reverse current V = 5 V I - - 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C -30- pF R j I = 100 mA, t = 20 ms I 1.6 4.5 8 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I -35- mW/sr F p e Radiant power I = 100 mA, t = 20 ms -15- mW F p e Temperature coefficient of I = 100 mA TK - -0.8 - %/K e F e Angle of half intensity - 60 - Peak wavelength I = 100 mA -950 - nm F p Spectral bandwidth I = 100 mA -50- nm F Temperature coefficient of I = 100 mA TK -0.2 - nm/K p F p I = 20 mA t -800 - ns F r Rise time I = 1 A t -400 - ns F r I = 20 mA t -800 - ns F f Fall time I = 1 A t -400 - ns F f Virtual source diameter EN 60825-1 d - 0.5 - mm Rev. 1.5, 15-Jul-2020 Document Number: 81373 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F