VSLY5850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity 22114 Narrow angle of half intensity: = 3 Suitable for high pulse current operation Good spectral matching with CMOS cameras DESCRIPTION Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TM As part of the SurfLight portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface APPLICATIONS emitter chip technology with extreme high radiant intensity, Infrared radiation source for operation with CMOS high optical power and high speed, molded in a clear, cameras untinted plastic package, with a parabolic lens. High speed IR data transmission Smoke-automatic fire detectors IR Flash PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSLY5850 600 3 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSLY5850 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.1, 28-Mar-13 Document Number: 83160 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSLY5850 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 22116 22115 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.65 1.9 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F I = 1 mA TK - 1.45 mV/K F VF Temperature coefficient of V F I = 10 mA TK - 1.25 mV/K F VF Reverse current I not designed for reverse operation A R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 300 600 900 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 5100 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 55 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 3 deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 10 ns F r Fall time I = 100 mA t 10 ns F f Rev. 1.1, 28-Mar-13 Document Number: 83160 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F