VSLY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: leaded Package form: T-1, clear epoxy Dimensions: 3 mm Peak wavelength: = 850 nm p High speed High radiant power High radiant intensity 94 8636 Angle of half intensity: = 18 Suitable for high pulse current operation Good spectral matching with CMOS cameras DESCRIPTION Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TM As part of the SurfLight portfolio, the VSLY3850 is an infrared, 850 nm emitting diode based on GaAlAs surface APPLICATIONS emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, Infrared radiation source for operation with CMOS untinted T1 plastic package. cameras High speed IR data transmission 3D TV application Light curtains PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSLY3850 70 18 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSLY3850 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 VSLY3850-ASZ Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB R 300 K/W thJA Rev. 1.4, 14-Jan-16 Document Number: 82395 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSLY3850 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 100 60 R = 300 K/W 80 R = 300 K/W thJA thJA 40 60 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 22322 amb 22323 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V - 1.65 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.9 - V F p F I = 1 mA TK - -1.45 - mV/K F VF Temperature coefficient of V F I = 10 mA TK - -1.25 - mV/K F VF Reverse current I Not designed for reverse operation A R V = 0 V, f = 1 MHz, R Junction capacitance C - 125 - pF J 2 E = 0 mW/cm I = 100 mA, t = 20 ms I 35 70 105 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 600 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 55 - mW F p Temperature coefficient of radiant I = 1 mA TK - -0.35 - %/K F e power Angle of half intensity - 18 - deg Peak wavelength I = 30 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30 - nm F Temperature coefficient of l I = 30 mA TK -0.25- nm p F p Rise time I = 100 mA, 20 % to 80 % t -10 - ns F r Fall time I = 100 mA, 20 % to 80 % t -10 - ns F f Rev. 1.4, 14-Jan-16 Document Number: 82395 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F