VSLB4940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: leaded Package form: T-1, clear epoxy Dimensions: 3 mm High speed High radiant power Low forward voltage Suitable for high pulse current operation Angle of half intensity: = 22 94 8636-2 Peak wavelength: = 940 nm p Good spectral matching to Si photodetectors Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 VSLB4940 is a high speed infrared emitting diode in GaAlAs, APPLICATIONS MQW technology, molded in a clear plastic package. Infrared remote control units Reflective sensors Light barriers PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSLB4940 65 22 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSLB4940 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.1, t = 100 s I 500 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -25 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB R 300 K/W thJA Rev. 1.0, 24-Jun-16 Document Number: 84343 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSLB4940 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 R = 300 K/W thJA 100 60 80 R = 300 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21318 T - Ambient Temperature (C) 21317 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t = 20 ms V 1.22 1.42 1.62 V F p F Temperature coefficient of V I = 1 mA TK --1.5 - mV/K F F VF Reverse current V = 5 V I - - 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -21- pF R J Radiant intensity I = 100 mA, t = 20 ms I 32 65 110 mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 40 - mW F p I = 1 mA TK - -1.1 - %/K Temperature coefficient of radiant F e power I = 100 mA TK --0.51 - %/K F e Angle of half intensity - 22 - deg Peak wavelength I = 30 mA - 940 - nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of l I = 30 mA TK -0.25- nm p F p Rise time I = 100 mA, 20 % to 80 % t -15- ns F r Fall time I = 100 mA, 20 % to 80 % t -15- ns F f Virtual source diameter d - 2 - mm Rev. 1.0, 24-Jun-16 Document Number: 84343 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F