VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 500 V DSS DESCRIPTION R 61.5 m DS(on) I 72 A Third generation power MOSFETs from Vishay D Semiconductors provide the designer with the best Type Modules - MOSFET combination of fast switching, ruggedized device design, Package SOT-227 low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 600 W to 1000 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS T = 25 C 72 C Continuous drain current at V 10 V I GS D T = 90 C 52 A C (1) Pulsed drain current I 228 DM T = 25 C 1136 C Power dissipation P W D T = 90 C 545 C Gate to source voltage V 20 V GS (2) Single pulse avalanche energy E 725 mJ AS (1) Repetitive avalanche current I 22 A AR (1) Repetitive avalanche energy E 120 mJ AR (3) Peak diode recovery dV/dt dV/dt 10 V/ns Operating junction and storage temperature range T , T -55 to +150 C J Stg Insulation withstand voltage (AC-RMS) V 2.5 kV ISO Mounting torque M4 screw, on terminals and heatsink 1.3 Nm Notes (1) Repetitive rating pulse width limited by maximum junction temperature (see fig. 18) (2) Starting T = 25 C, L = 500 H, R = 2.4 , I = 57 A (see fig. 18) J g AS (3) I 57 A, dI /dt 200 A/s, V V , T 150 C SD F DD (BR)DSS J Revision: 02-Oct-2018 Document Number: 94782 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-FA72SA50LC www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX. UNITS Junction and storage temperature range T , T -55 - 150 C J Stg Junction to case R - - 0.11 thJC C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V V = 0 V, I = 1.0 mA 500 - - V (BR)DSS GS D Breakdown voltage temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.64 - V/C (BR)DSS J D (1) Static drain to source on-resistance R V = 10 V, I = 34 A - 61.5 80.0 m DS(on) GS D V = V , I = 250 A 2.0 3.0 4.0 DS GS D Gate threshold voltage V V GS(th) V = V , I = 250 A, T = 125 C - 1.9 - DS GS D J Forward transconductance g V = 50 V, I = 34 A - 52.5 - S fs DS D V = 500 V, V = 0 V - 0.5 50 DS GS A Drain to source leakage current I V = 500 V, V = 0 V, T = 125 C - 30 500 DSS DS GS J V = 500 V, V = 0 V, T = 150 C - 0.2 3.0 mA DS GS J Gate to source forward leakage V = 20 V - - 200 GS I nA GSS Gate to source reverse leakage V = - 20 V - - - 200 GS Total gate charge Q - 225 338 g I = 60 A D Gate to source charge Q V = 400 V -51 77 nC gs DS (1) V = 10 V see fig. 15 and 19 Gate to drain (Miller) charge Q GS - 98 147 gd Turn-on delay time t - 134 - d(on) V = 250 V DD Rise time t I = 60 A -44 - r D ns R = 2.4 Turn-off delay time t - 150 - g d(off) L = 500 H diode used: 60APH06 Fall time t -43 - f Turn-on delay time t - 135 - d(on) V = 250 V DD Rise time t I = 60 A -47 - r D ns R = 2.4 Turn-off delay time t - 160 - d(off) g L = 500 H diode used: 60APH06 Fall time t -35 - f Internal source inductance L Between lead, and center of die contact - 5.0 - nH S Input capacitance C - 10 000 - iss V = 0 V GS Output capacitance C V = 25 V - 1500 - pF oss DS f = 1.0 MHz, see fig. 14 Reverse transfer capacitance C -50 - rss Note (1) Pulse width 300 s, duty cycle 2 % Revision: 02-Oct-2018 Document Number: 94782 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000