SI2302CDS-T1-GE3 Vishay

Si2302CDS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET D Material categorization: 3 for definitions of compliance please see www.vishay.com/doc 99912 Available 2 S APPLICATIONS Load switching for portable devices 1 D G DC/DC converter Top View Marking code: N2 G PRODUCT SUMMARY V (V) 20 DS R max. ( ) at V = 4.5 V 0.057 DS(on) GS R max. ( ) at V = 2.5 V 0.075 DS(on) GS S Q typ. (nC) 3.5 g N-Channel MOSFET I (A) 2.9 D Configuration Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free Si2302CDS-T1-E3 Lead (Pb)-free and halogen-free Si2302CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A STEADY PARAMETER SYMBOL 5 S UNIT STATE Drain-source voltage V 20 20 DS V Gate-source voltage V 8 8 GS T = 25 C 2.9 2.6 A a Continuous drain current (T = 150 C) I J D T = 70 C 2.3 2.1 A A b Pulsed drain current I 10 10 DM a Continuous source current (diode conduction) I 0.72 0.6 S T = 25 C 0.86 0.71 A a Power dissipation P W D T = 70 C 0.55 0.46 A Operating junction and storage temperature range T , T -55 to +150 -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 120 145 a Maximum junction-to-ambient R thJA Steady state 140 175 C/W Maximum junction-to-foot Steady state R 62 78 thJF Notes a. Surface mounted on 1 x 1 FR4 board b. Pulse width limited by maximum junction temperature S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si2302CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN. TYP. MAX. Static Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - DS GS D V Gate-threshold voltage V V = V , I = 250 A 0.40 - 0.85 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 20 V, V = 0 V - - 0.1 DS GS Zero gate voltage drain current I V = 20 V, V = 0 V, T = 50 C - - 4 A DSS DS GS J V = 20 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V = 4.5 V 6 - - A D(on) DS GS V = 4.5 V, I = 3.6 A - 0.045 0.057 GS D a Drain-source on-resistance R DS(on) V = 2.5 V, I = 3.1 A - 0.056 0.075 GS D a Forward transconductance g V = 5 V, I = 3.6 A - 13 - S fs DS D Diode forward voltage V I = 0.95 A, V = 0 V - 0.7 1.2 V SD S GS b Dynamic Total gate charge Q -3.5 5.5 g Gate-source charge Q V = 10 V, V = 4.5 V, I = 3.6 A -0.6 - nC gs DS GS D Gate-drain charge Q -0.45- gd Gate resistance R f = 1 MHz 2 4 8 g Switching Turn-on delay time t -8 15 d(on) Rise time t -7 15 r V = 10 V, R = 2.78 DD L I 3.6 A, V = 4.5 V, R = 1 Turn-off delay time t -3D GEN g 045 ns d(off) Fall time t -7 15 f Source-drain reverse recovery time t -8.5 15 rr I = 3.6 A, di/dt = 100 A/s F Body diode reverse recovery charge Q -2 4 nC rr Notes a. Pulse test: Pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000