LL4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diodes Low forward voltage drop High forward current capability AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS08/2.5K per 7 reel (8 mm tape),12.5K/box GS18/10K per 13 reel (8 mm tape),10K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS LL4150 LL4150GS08 or LL4150GS18 - Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 50 V RRM Reverse voltage V 50 V R Peak forward surge current t = 1 s I 4A p FSM Forward continuous current I 600 mA F Average forward current V = 0 I 300 mA R F(AV) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 300 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Operating temperature range T -55 to +175 C op Rev. 2.0, 14-Jul-17 Document Number: 85558 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 LL4150 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.540 0.620 V F F I = 10 mA V 0.660 0.740 V F F Forward voltage I = 50 mA V 0.760 0.860 V F F I = 100 mA V 0.820 0.920 V F F I = 200 mA V 0.870 1 V F F V = 50 V I 100 nA R R Reverse current V = 50 V, T = 150 C I 100 A R j R V = 0, f = 1 MHz, R Diode capacitance C 2.5 pF D V = 50 mV HF I = I = 10 mA to 100 mA, F R Reverse recovery time t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 1000 Scattering Limit 10 100 Scattering Limit 1 10 0.1 1 V = 50 V T = 25 C J R 0.01 0.1 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0 T - Junction Temperature (C) V - Forward Voltage (V) 94 9100 94 9162 J F Fig. 2 - Forward Current vs. Forward Voltage Fig. 1 - Reverse Current vs. Junction Temperature PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 5 (0.197) ref. 96 12070 Rev. 2.0, 14-Jul-17 Document Number: 85558 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) R 1.6 (0.063) I - Forward Current (mA) 1.4 (0.055) F 2 (0.079) min.