VNP10N07OMNIFE:
FULLY AUTOPROTECTED POWER MOSFET
TYPE V R I
clamp DS(on) lim
VNP10N07 70 V 0.1 10 A
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
3
2
PIN
1
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
TO-220
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
DESCRIPTION
tation and overvoltage clamp protect the chip
The VNP10N07 is a monolithic device made
in harsh enviroments.
using STMicroelectronics VIPower Technology,
Fault feedback can be detected by monitoring the
intended for replacement of standard power
voltage at the input pin.
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
1/11
September 2013VNP10N07
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V Drain-source Voltage (V = 0) Internally Clamped V
DS in
V Input Voltage 18 V
in
I Drain Current Internally Limited A
D
I Reverse DC Output Current -14 A
R
V Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V
esd
o
P Total Dissipation at T = 25 C50 W
tot c
o
T Operating Junction Temperature Internally Limited C
j
o
T Case Operating Temperature Internally Limited C
c
o
T Storage Temperature -55 to 150 C
stg
THERMAL DATA
o
R Thermal Resistance Junction-case Max 2.5 C/W
thj-case
o
R Thermal Resistance Junction-ambient Max 62.5 C/W
thj-amb
o
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V Drain-source Clamp I = 200 mA V = 0 607080 V
CLAMP D in
Voltage
V Drain-source Clamp I = 2 mA V = 0 55 V
CLTH D in
Threshold Voltage
VINCL Input-Source Reverse Iin = -1 mA -1 -0.3 V
Clamp Voltage
I Zero Input Voltage V = 13 V V = 0 50 A
DSS DS in
Drain Current (V = 0) V = 25 V V = 0 200 A
in DS in
I Supply Current from V = 0 V V = 10 V 250 500 A
ISS DS in
Input Pin
ON (* )
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V Input Threshold V = V I + Ii = 1 mA 0.8 3 V
IN(th) DS in D n
Voltage
R Static Drain-source On V = 10 V I = 5 A 0.1
DS(on) in D
Resistance V = 5 V I = 5 A 0.14
in D
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g (* ) Forward V = 13 V I = 5 A 6 8 S
fs DS D
Transconductance
C Output Capacitance V = 13 V f = 1 MHz V = 0 350 500 pF
oss DS in
2/11