Product Information

T1235T-8T

T1235T-8T electronic component of STMicroelectronics

Datasheet
Triacs 12A Snubberless Triac 800V rms 35mA

Manufacturer: STMicroelectronics
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Price (AUD)

17: AUD 1.284 ( AUD 1.41 Inc GST) ea
Line Total: AUD 21.828 ( AUD 24.01 Inc GST)

142885 - Global Stock
Ships to you between
Thu. 11 Jul to Wed. 17 Jul
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
142885 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 17
Multiples : 1

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T1235T-8T
STMicroelectronics

17 : AUD 0.976
100 : AUD 0.8764
500 : AUD 0.793
1000 : AUD 0.7852

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
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Subcategory
Taric
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T1235T-8T Datasheet 12 A 800 V Snubberless Triac in TO-220AB package Features A2 Medium current Triac High static and dynamic commutation Three quadrants G ECOPACK2 compliant A1 Applications A2 General purpose AC line load switching Motor control circuits Small home appliances Lighting G Inrush current limiting circuits A2 A1 Overvoltage crowbar protection TO-220AB Description Available in through-hole package, the T1235T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Product status link T1235T-8T Product summary Order code T1235T-8T Package TO-220AB I 12 A T(RMS) V /V 800 V DRM RRM V /V 900 V DSM RSM I 35 mA GT DS9635 - Rev 4 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.T1235T-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 131 C On-state RMS current (full sine wave) 12 A T(RMS) c F = 50 Hz t = 20 ms 90 I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j F = 60 Hz t = 16.7 ms 95 2 2 2 I t value for fusing, (T initial = 25 C) t = 10 ms 54 I t p A s j T = 150 C 600 j V /V Repetitive surge peak off-state voltage V DRM RRM T = 125 C 800 j V /V Non repetitive surge peak off-state voltage t = 10 ms 900 V DSM RSM p Critical rate of rise of on-state current dl/dt F = 100 Hz 100 A/s I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C L Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 1.75 (1) I V = 12 V, R = 30 I - II - III mA D L GT Max. 35 V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = V , R = 3.3 k , T = 150 C I - II - III Min. 0.2 V GD D DRM L j I I = 500 mA Max. 40 mA H T I - III 60 I I = 1.2 x I Max. mA L G GT II 65 V = 536 V, gate open T = 125 C 2000 D j (2) dV/dt Min. V/s T = 150 C VD = 402 V, gate open 1000 j T = 125 C 12 j (2) (dI/dt)c Without snubber (dV/dt)c > 20 V/s Min. A/ms T = 150 C 6 j 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 DS9635 - Rev 4 page 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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