STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features V CE(sat) TYPE V I T CES C C (typ.) 1.2V 150A 100C STGE200NB60S 600V 1.3V 200A 25C High input impedance (voltage driven) ISOTOP Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability Description Internal schematic diagram Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix S identifies a family optimized to achieve very low VCE(sat) ( max frequency of 1KHz). Applications Low frequency motor controls Aluminum welding equipment Order codes Part number Marking Package Packaging STGE200NB60S GE200NB60S ISOTOP Tube November 2006 Rev 8 1/13 www.st.com 13Contents STGE200NB60S Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/13