Product Information

STGB10NC60KT4

STGB10NC60KT4 electronic component of STMicroelectronics

Datasheet
IGBT Transistors N-channel MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.791 ( AUD 1.97 Inc GST) ea
Line Total: AUD 1.791 ( AUD 1.97 Inc GST)

1881 - Global Stock
Ships to you between
Mon. 22 Jul to Fri. 26 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1881 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1

Stock Image

STGB10NC60KT4
STMicroelectronics

1 : AUD 1.791

1881 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 7
Multiples : 1

Stock Image

STGB10NC60KT4
STMicroelectronics

7 : AUD 1.791

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features Low on voltage drop (V ) CESAT Short-circuit withstand time 10 s TAB Applications High frequency motor controls 3 1 SMPS and PFC in both hard switch and resonant topologies DPAK Motor drives Description This device utilizes the advanced Power MESH Figure 1. Internal schematic diagram process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Part number Marking Package Packaging STGB10NC60KT4 GB10NC60K DPAK Tape and reel February 2011 Doc ID 11842 Rev 4 1/11 www.st.com 11 Obsolete Product(s) - Obsolete Product(s)Electrical ratings STGB10NC60K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE (1) I Continuous collector current at T = 25C 20 A C C (1) I Continuous collector current at T = 100C 10 A C C (2) I Turn-off latching current 30A CL (3) I Pulsed collector current 30A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25C 65 W TOT C T Storage temperature STG 55 to 150 C T Operating junction temperature J Short-circuit withstand time (V = 0.5 V , CE CES t 10 s SCW T = 125 C, R = 10 , V = 12 V) J G GE 1. Calculated according to the iterative formula: T T jm()ax C I()T = ------------------------------------------------------------------------------------------------------- C C R V ()T , I()T thj c CE()sat()max jm()ax C C 2. V = 80 % V , V = 15 V, R = 10 , T = 150 C clamp CES GE G J 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.9 C/W thJC R Thermal resistance junction-ambient 62.5 C/W thJA 2/11 Doc ID 11842 Rev 4 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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