STD26P3LLH6 STMicroelectronics

STD26P3LLH6 P-channel 30 V, 0.024 typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I P TAB DSS D TOT max (1) STD26P3LLH6 30 V 0.030 12 A 40 W 3 2 1. V = 10 V GS 1 R * Q industry benchmark DS(on) g DPAK Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications D(2 or TAB) LCC converters, resonant converters Description This device is a P-channel Power MOSFET th developed using the 6 generation of STripFET G(1) DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages DS(on) S(3) AM11258v1 Table 1. Device summary Order code Marking Package Packaging STD26P3LLH6 26P3LLH6 DPAK Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. February 2014 DocID023574 Rev 5 1/16 This is information on a product in full production. www.st.comContents STD26P3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID023574 Rev 5