STD130N6F7 STMicroelectronics

STD130N6F7 N-channel 60 V, 4.2 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD130N6F7 60 V 5.0 m 80 A 134 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- G(1) state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD130N6F7 130N6F7 DPAK Tape and reel October 2016 DocID028788 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STD130N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 DPAK package information ............................................................... 9 5 Revision history ............................................................................ 12 2/13 DocID028788 Rev 2