SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., T = 150 C) in an HiP247 package J Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS D(2, TAB) Motor drives High voltage DC-DC converters Switch mode power supplies G(1) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. S(3) The outstanding thermal properties of the SiC material, combined with the devices AM01475v1 noZen housing in the proprietary HiP247 package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247 Packing Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as halogen-free. DS10954 - Rev 3 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.SCT10N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 150 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.17 C/W thj-case R Thermal resistance junction-ambient max 40 C/W thj-amb DS10954 - Rev 3 page 2/13