MLPF-WB55-02E3 Datasheet 2.4 GHz low pass filter matched to STM32WB55Vx Features Integrated impedance matching to STM32WB55Vx LGA footprint compatible 50 nominal impedance on antenna side Deep rejection harmonics filter Low insertion loss Small footprint Low thickness 450 m High RF performance RF BOM and area reduction Top view (pads down) ECOPACK2 compliant component OUT GND3 Applications Bluetooth 5 GND4 GND2 OpenThread Zigbee IN GND1 IEEE 802.15.4 Optimized for STM32WB55Vx Description The MLPF-WB55-02E3 integrates an impedance matching network and harmonics Product status link filter. The matching impedance network has been tailored to maximize the RF MLPF-WB55-02E3 performance of STM32WB55Vx. This device uses STMicroelectronics IPD technology on non-conductive glass substrate which optimizes RF performance. DS13176 - Rev 2 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.MLPF-WB55-02E3 Characteristics 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit P Input power RF 10 dBm IN IN ESD ratings human body model (JESD22-A114-C), all I/O one at a time while 2000 others connected to GND V V ESD ESD ratings machine model, all I/O 200 T Maximum operating temperature -40 to +105 C OP Table 2. Impedances(T = 25 C) amb Value Symbol Parameter Unit Min. Typ. Max. STM32WB55xx single-ended matched to Z - - IN impedance STM32WB55Vx Z OUT Antenna impedance - 50 - Table 3. Electrical characteristics and RF performance (T = 25 C) amb Value Symbol Parameter Unit Min. Typ. Max. f Frequency range 2400 2500 MHz Insertion loss lS l IL 1.0 1.2 dB 21 RL Input return loss IS I 13 17 dB IN 11 RL Output return loss lS l 15 18 dB OUT 22 Attenuation at 2fo 43 45 dB (4800-5825) MHz Attenuation at 3fo 47 53 dB (7200 7500) MHz Harmonic rejection Att levels IS I 21 Attenuation at 4fo 41 56 dB (9600 10000) MHz Attenuation at 5fo 38 44 dB (12000 12500) MHz DS13176 - Rev 2 page 2/14