Product Information

M48Z12-150PC1

M48Z12-150PC1 electronic component of STMicroelectronics

Datasheet
NVRAM 16K (2Kx8) 150ns

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 24.1982 ( AUD 26.62 Inc GST) ea
Line Total: AUD 24.1982 ( AUD 26.62 Inc GST)

7 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
436 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3
Multiples : 1

Stock Image

M48Z12-150PC1
STMicroelectronics

3 : AUD 30
5 : AUD 21.625
10 : AUD 21.1

7 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1

Stock Image

M48Z12-150PC1
STMicroelectronics

1 : AUD 24.3846
10 : AUD 22.8466
25 : AUD 21.9844
100 : AUD 19.3938
280 : AUD 19.013
560 : AUD 18.1322

     
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Notes:- Show Stocked Products With Similar Attributes.

M48Z02, M48Z12 5 V, 16 kbit (2 Kb x 8) ZEROPOWER SRAM Datasheet - production data Description The M48Z02/12 ZEROPOWER RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220. A special 24-pin, 600 mil DIP CAPHAT package houses the M48Z02/12 silicon with a long-life 24 lithium button cell to form a highly integrated 1 battery-backed memory solution. PDIP 24.7 The M48Z02/12 button cell has sufficient capacity and storage life to maintain data functionality for Battery CAPHAT an accumulated time period of at least 10 years in the absence of power over commercial operating temperature range. Features The M48Z02/12 is a non-volatile pin and function equivalent to any JEDEC standard 2 K x 8 SRAM. Integrated, ultra low power SRAM and power- It also easily fits into many ROM, EPROM, and fail control circuit EEPROM sockets, providing the non-volatility of Unlimited WRITE cycles PROMs without any requirement for special WRITE timing or limitations on the number of READ cycle time equals WRITE cycle time WRITEs that can be performed. Automatic power-fail chip deselect and WRITE protection WRITE protect voltages (V = power-fail deselect voltage): PFD M48Z02: V = 4.75 to 5.5 V CC 4.5 V V 4.75 V PFD M48Z12: V = 4.5 to 5.5 V CC 4.2 V V 4.5 V PFD Self-contained battery in the CAPHAT DIP package Pin and function compatible with JEDEC standard 2 K x 8 SRAMs RoHS compliant Lead-free second level interconnect September 2020 DocID02420 Rev 10 1/20 This is information on a product in full production. www.st.comContents M48Z02, M48Z12 Contents 1 Diagram . 3 2 Pin setting . 4 3 Operation modes 5 3.1 READ mode 5 3.2 WRITE mode . 6 3.3 Data retention mode 8 3.4 V noise and negative going transients . 10 CC 4 Maximum ratings . 11 5 DC and AC parameters 12 6 Package mechanical data 15 7 Part numbering 17 8 Environmental information . 18 9 Revision history . 19 2/20 DocID02420 Rev 10

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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