Product Information

M29W320DB70N6E

M29W320DB70N6E electronic component of STMicroelectronics

Datasheet
Flash Memory 4Mx8 or 2Mx16 70ns

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

96: AUD 3.3298 ( AUD 3.66 Inc GST) ea
Line Total: AUD 319.6608 ( AUD 351.63 Inc GST)

0 - Global Stock
MOQ: 96  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 96
Multiples : 1

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M29W320DB70N6E
STMicroelectronics

96 : AUD 3.3298
192 : AUD 3.0847
288 : AUD 2.8192
768 : AUD 2.7375
1824 : AUD 2.5535

     
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase and CC Read V =12V for Fast Program (optional) PP ACCESS TIME: 70, 90ns PROGRAMMING TIME 10s per Byte/Word typical TSOP48 (N) 12 x 20mm 67 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 64 Main Blocks FBGA PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES TFBGA63 (ZA) 63 ball array Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch Programming V /WP PIN for FAST PROGRAM and WRITE PP PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE 64 bit Security Code LOW POWER CONSUMPTION Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W320DT: 22CAh Bottom Device Code M29W320DB: 22CBh May 2003 1/44M29W320DT, M29W320DB TABLE OF CONTENTS SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names . 5 Figure 3. TSOP Connections . 6 Figure 4. TFBGA Connections (Top view through package) . 7 Figure 5. Block Addresses (x8) . 8 Figure 6. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A20) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A1). . 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 V Write Protect (V WP) . 10 PP/ PP/ Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 11 V Supply Voltage (2.7V to 3.6V). .11 CC V Ground . 11 SS BUS OPERATIONS 12 Bus Read . 12 Bus Write . 12 Output Disable . 12 Standby 12 Automatic Standby 12 Special Bus Operations 12 Electronic Signature . 12 Block Protect and Chip Unprotect 12 Block Protect and Chip Unprotect 12 Table 2. Bus Operations, BYTE = V . 13 IL Table 3. Bus Operations, BYTE = V . 13 IH COMMAND INTERFACE . 14 Read/Reset Command . 14 Auto Select Command . 14 Program Command . 14 Unlock Bypass Command 14 Unlock Bypass Program Command . 15 Unlock Bypass Reset Command .15 2/44

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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