EVALSTGAP2DM

EVALSTGAP2DM Demonstration board for the STGAP2DM isolated half-bridge gate driver Data brief Description The STGAP2DM is an isolated half-bridge gate driver. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power applications such as motor drivers in industrial applications equipped with MOSFET, IGBT or SiC power switches. The device integrates protection functions: Features dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to High voltage rail up to 1700 V easily design high reliability systems, and the interlocking function prevents outputs from being Driver current capability: high at the same time. 4 A source/sink 25 C Short propagation delay: 80 ns The device allows to implement negative gate driving, and the onboard isolated DC-DC UVLO function converters allow working with optimized driving Interlocking function voltage for MOSFET, IGBT or SiC. Dedicated SD and BRAKE pins The EVALSTGAP2DM board allows to evaluate Gate driving voltage up to 26 V all the STGAP2DM features while driving a half- bridge power stage with voltage rating up to Negative gate driving 1700 V in a TO-220 or TO-247 package. Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, The board allows to easily select and modify the fed by VAUX = 5 V values of relevant external components in order to ease driver performance evaluation under 3.3 V VDD logic supply generated onboard different applicative conditions and fine pre-tuning or 5 V (externally applied) of final application components. 3.3 V, 5 V TTL/CMOS inputs with hysteresis Easy jumper selection of driving voltage configuration: +15/0 V +15/-3 V +19/0 V +19/-3 V Temperature shutdown protection Standby function November 2018 DB3723 Rev 2 1/8 For further information contact your local STMicroelectronics sales office. www.st.comSchematic diagram EVALSTGAP2DM 1 Schematic diagram Figure 1. EVALSTGAP2DM schematic - gate driver VH B D3 R3 1 2 STTH112A N.M. CN3 HV HV 20-30R 1 1 2 2 VH A R4 22 ohm TP20 TE 928814-1 GOUT A 2 TP2 D4 R5 Q1 U1 GH 1 TP28 VDD VH A STGAP2DM N.M. STPS2L40ZFY 2.2 ohm 3 1 14 D12 N.M. C20 C5 VDD VH A TP3 CN4 GNDISO A OUT 15 1uF/50V N.M. GOUT A C6 C7 INA 2 JP1 1 TP24 INA GNDISO A 1 INB 3 16 OUT 2 4.7uF/50V 100nF/16V TP25 GNDISO A INB 2 SD 4 TP26 SD VH B CLOSED GOUT B BRAKE 5 TP27 TE 928814-1 BRAKE 9 TP4 TP21 VH B R8 22 ohm C8 1uF/50V 6 10 2 VDD2 GOUT B 7 11 D5 R9 Q2 C38 R7 GND GNDISO B GL 1 N.M. N.M. VH B N.M. STPS2L40ZFY 2.2 ohm 3 C37 D13 N.M. C12 TP1 TP5 TP23 CN5 GNDISO B GNDPWR 1uF/50V N.M. GND JP2 1 GNDISO B : 1 2 2 CLOSED R10 R11 TE 928814-1 PWMA INA PWMB INB C13 1uF/50V 100 ohm C14 100 ohm C15 220pF/25V 220pF/25V VDD2 VDD 2 1 3 VDD VDD JP3 1-2 CLOSE R24 R6 R12 10k R23 10k TR1 BRAKE IN SD IN BRAKE SD N.M. 1k C16 1k C10 1nF/25V 1nF/25V Figure 2. EVALSTGAP2DM circuit schematic - supply, connectors and decoupling JP7 OPEN DCDCH+ VH A CN1 2 3 TP6 N.M. R20 Q4 VH A 2 1K 2STF1360 1 GNDISO A 1 FB4 JP8 U3 CLOSED BLM21AG471SN1 C28 7 T1 N.M. +Vout 1uF/50V D10 D11 R13 0 ohm 1 +Vin BZT585B20T BZT585B16T 1 4 JP5 VAUX 6 OUT 0V C27 OPEN C19 2 3 2 -Vin C29 5 D1 1uF/50V -Vout 1uF/50V N.M. FB3 BZT585B2V7T JP6 MGJ2D052005SC DCDCH- GNDISO A TP7 BLM21AG471SN1 CLOSED GNDISO A JP4 OPEN VH B DCDCL+ CN2 2 3 TP8 N.M. R19 Q3 1 1K VH B 2STF1360 1 GNDISO B 2 C31 FB2 JP9 1uF/50V U2 CLOSED BLM21AG471SN1 7 +Vout D8 D9 R15 0 ohm T2 N.M. 1 +Vin BZT585B20T BZT585B16T 1 4 JP11 6 GNDPWR 0V C33 OPEN 2 3 2 C23 C32 -Vin 5 1uF/50V -Vout 1uF/50V N.M. FB1 D7 BZT585B2V7T JP10 MGJ2D052005SC DCDCL- GNDISO B TP9 BLM21AG471SN1 CLOSED GNDISO B VAUX VDD 1 HV VAUX R21 10M R17 2 240 ohm JP12 2-3 CLOSE 3V3 REG + C36 C35 C34 C1 C2 R22 3 3V3 N.M. N.M. 33nF/1250V 10M N.M. N.M. Film Electr. SMD SMD Film D2 C17 C18 P 15mm P 10 1812 1812 P 27.5 MMSZ3V3T1G 4.7uF/10V 10uF/25V 2/8 DB3723 Rev 2 C9 C3 100nF/50V 100nF/50V C11 C4 4.7uF/50V 4.7uF/50V Q2/Q2A Q1/Q1A TO247/TO220 TO247/TO220